Intercalation of Thin-Film Gd-Doped Ceria Barrier Layers in Electrolyte-Supported Solid Oxide Cells: Physicochemical Aspects

To minimize alteration of the La0.6Sr0.4Co0.2Fe0.8O3−δ (LSCF)/Gd0.2Ce0.8O2−δ(CGO20)/Y0.06Zr0.94O2−δ(3YSZ) interface via strontium zirconate formation in solid oxide cells, electron beam physical vapor deposition was employed to manufacture dense, thin gadolinium-doped ceria (CGO) interlayers. CGO layers with thicknesses 0.15, 0.3, and 0.5 μm were integrated state-of-the-art 5 × cm2-large electrolyte-supported their performance characteristics degradation behavior investigated. Electrochemical impedance spectroscopy measurements are correlated a postmortem scanning microscopy/energy-dispersive X-ray analysis show that 0.15 μm-thick lead continuous Sr-containing secondary phase at CGO/YSZ interface, likely related SrO–ZrO2 phase. Major losses confirmed by an increase both Ohmic polarization resistance frequency region ∼103 Hz. Cells 0.3 μm- showed similar high low rates over testing period ∼800 h. The YSZ/CGO cells layer discontinuous phase; however, still successfully prevented. Furthermore, it is observed sufficient suppress